Insights into the off-state breakdown mechanisms in power GaN HEMTs

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

OFF-state TDDB in High-Voltage GaN MIS-HEMTs

We have investigated time-dependent dielectric breakdown (TDDB) in high-voltage AlGaN/GaN MetalInsulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) biased in the OFF state. This is an important reliability concern that has been overlooked. Towards this goal, we have developed a novel methodology using ultraviolet light that allows us to separate the permanent effects of dielec...

Breakdown behaviour of high-voltage GaN-HEMTs

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate Citation

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...

Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs

Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, email: [email protected] The last twenty years have witnessed numerous de...